Product Information

M93C86-WDW6TP

M93C86-WDW6TP electronic component of STMicroelectronics

Datasheet
STMicroelectronics EEPROM 16K (2Kx8 or 1Kx16)

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.3164 ea
Line Total: USD 1265.6

3880 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
3802 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 80
Multiples : 1

Stock Image

M93C86-WDW6TP
STMicroelectronics

80 : USD 0.4818
100 : USD 0.3977
200 : USD 0.3708
500 : USD 0.3648

3880 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 4000

Stock Image

M93C86-WDW6TP
STMicroelectronics

4000 : USD 0.3164
8000 : USD 0.31
12000 : USD 0.3038

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Access Time
Data Retention
Supply Current - Max
Series
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Programming Voltage
Subcategory
Taric
Tradename
LoadingGif

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M93C86-x M93C76-x M93C66-x M93C56-x M93C46-x Datasheet 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM Features Industry standard MICROWIRE bus Single supply voltage: 2.5 V to 5.5 V for M93Cx6-W SO8N 1.8 V to 5.5 V for M93Cx6-R (150 mil width) Dual organization: by word (x16) or byte (x8) Programming instructions that work on: byte, word or entire memory Self-timed programming cycle with auto-erase: 5 ms READY/BUSY signal during programming TSSOP8 2 MHz clock rate (169 mil width) Sequential read operation Enhanced ESD/latch-up behavior More than 4 million write cycles More than 200-year data retention Package UFDFPN8 (DFN8) ECOPACK2 (RoHS compliant) and halogen-free packages: (2 x 3 mm) DFN8 SO8N TSSOP8 Product status link M93C46-W M93C56-W M93C56-R M93C66-W M93C66-R M93C76-W M93C76-R M93C86-W M93C86-R DS1077 - Rev 18 - January 2022 www.st.com For further information contact your local STMicroelectronics sales office.M93C86-x M93C76-x M93C66-x M93C56-x M93C46-x Description 1 Description The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and the M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V. All these devices operate with a clock frequency of 2 MHz (or less), over an ambient temperature range of - 40 C / + 85 C. Table 1. Memory size versus organization Device Number of bits Number of 8-bit bytes Number of 16-bit words M93C86 16384 2048 1024 M93C76 8192 1024 512 M93C66 4096 512 256 M93C56 2048 256 128 M93C46 1024 128 64 Figure 1. Logic diagram VCC D Q C M93Cx6 S ORG VSS MS69281V1 Table 2. Signal names Signal name Function Direction S Chip Select Input D Serial Data input Input Q Serial Data output Output C Serial Clock Input ORG Organization Select Input V Supply voltage - CC V Ground - SS DS1077 - Rev 18 page 2/34

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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