PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 30 W with 14dB gain 945 MHz / 28 V OUT New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices PowerSO-10RF superior linearity performance makes it an ideal (straight lead) solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially Figure 1. Pin connection optimized for RF needs and offers excellent RF Source performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Drain Gate Table 1. Device summary Order code Package Packing PD57030-E PowerSO-10RF (formed lead) Tube PD57030S-E PowerSO-10RF (straight lead) Tube PD57030TR-E PowerSO-10RF (formed lead) Tape and reel PD57030STR-E PowerSO-10RF (straight lead) Tape and reel December 2010 Doc ID 12613 Rev 3 1/18 www.st.com 18Contents PD57030-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57030S-E . 7 5 Test circuit 10 6 Package mechanical data 12 7 Revision history . 17 2/18 Doc ID 12613 Rev 3