SD2931-10W STMicroelectronics

SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet - production data P = 150 W min. with 14 dB gain 175 MHz OUT Thermally enhanced packaging for lower junction temperatures Description The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large M174 signal applications up to 230 MHz. Epoxy sealed The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), Figure 1. Pin connection representing the best-in-class transistors for ISM applications, where reliability and ruggedness are 4 1 critical factors. 3 2 3. Gate 1. Drain 4. Source 2. Source Features Gold metalization Excellent thermal stability Common source configuration Table 1. Device summary (1) Order code Marking Base qty. Package Packaging SD2931-10W SD2931-10 25 pcs M174 Plastic tray 1. For more details please refer to Chapter 11: Marking, packing and shipping specifications. July 2016 DocID7076 Rev 10 1/19 This is information on a product in full production. www.st.comContents SD2931-10 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static 4 2.2 Dynamic . 4 3 Transient thermal impedance 6 4 Impedance data . 8 5 Typical performance . 9 6 Typical performance 175 MHz 10 7 Test circuit 11 8 Typical performance 30 MHz . 13 9 Test circuit 30 MHz . 14 10 Package information 15 11 Marking, packing and shipping specifications . 17 12 Revision history . 18 2/19 DocID7076 Rev 10