STAC150V2-350E STMicroelectronics

STAC150V2-350E RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Datasheet production data Features Operating frequencies up to 40.68 MHz Excellent thermal stability P = 350 W with 17 dB gain OUT 40.68 MHz/150 V Designed for class E operation V > 700 V (BR)DSS STAC air cavity packaging technology - STAC package In compliance with the 2002/95/EC1 European directive STAC177B Description Figure 1. Pin connection The STAC150V2-350E is a high voltage N- channel MOS field-effect RF power transistor 1 (drain) especially designed for 150V Industrial RF power class E generators such as PECVD plasma sputtering, flat panel and solar cells manufacturing equipments. STAC150V2-350E 2 (source) 4 (source) benefits from the latest generation of STAC air cavity package which exhibits a 25% lower thermal resistance compared to equivalent ceramic package. 3 (gate) 5 (source) on backside Table 1. Device summary Order code Marking Base qty. Package Packaging (1) STAC150V2-350E 150V2-350 25 pcs STAC177B Plastic tray 1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.. January 2013 Doc ID 024198 Rev 1 1/12 This is information on a product in full production. www.st.com 12Contents STAC150V2-350E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedance data . 5 4 Typical performance . 6 5 Package mechanical data . 8 6 Marking, packing and shipping specifications . 10 7 Revision history . 11 2/12 Doc ID 024198 Rev 1