STAC2942BW STMicroelectronics

STAC2942B Datasheet HF/VHF/UHF RF power N-channel MOSFET Features 1 V P 1 Order code Frequency Gain Efficiency DD OUT STAC2942BW 175 MHz 50 V 350 W 21 dB 60 % 2 Gold metallization 3 Excellent thermal stability 3 Common source push-pull configuration STAC780-4B P = 350 W min. with 21 dB gain at 175 MHz OUT In compliance with the 2002/95/EC European directive Pin connection ST air-cavity STAC packaging technology Pin Connection 1 Drain Description 2 Source (bottom side) The STAC2942B is a gold metallized N-channel MOS field-effect RF power transistor, 3 Gate intended for use in 50 V DC large signal applications up to 250 MHz. Product status link STAC2942B Product summary Order code STAC2942BW Marking STAC2942 Package STAC780-4B Packing Box Base / Bulk qty 20 / 80 DS6158 - Rev 8 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office.STAC2942B Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit (1) V Drain source voltage 130 V (BR)DSS (1) V Drain-gate voltage (R = 1 M) 130 V DRG GS V Gate-source voltage 20 V GS I Drain current 40 A D P Power dissipation 625 W DISS T Maximum operating junction temperature 200 C J T Storage temperature range -65 to +150 C STG 1. T = 150 C J 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 0.28 C/W thJC 1.3 ESD protection characteristics Table 3. ESD protection Symbol Test Methodology Class HBM Human Body Model (per JESD22-A114) 2 DS6158 - Rev 8 page 2/16