Product Information

STAC2942BW

STAC2942BW electronic component of STMicroelectronics

Datasheet
Transistors RF MOSFET 300W 50V RF MOS 21dB 175MHz N-Ch
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 164.7589 ea
Line Total: USD 164.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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STAC2942BW
STMicroelectronics

1 : USD 91.8911

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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STAC2942BW
STMicroelectronics

1 : USD 148.6557

0 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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STAC2942BW
STMicroelectronics

1 : USD 164.7589
5 : USD 149.5069
10 : USD 146.4593

0 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 20
Multiples : 20

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STAC2942BW
STMicroelectronics

20 : USD 128.6479
40 : USD 119.1184

0 - WHS 5


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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STAC2942BW
STMicroelectronics

1 : USD 131.326
5 : USD 123.228
10 : USD 120.383
25 : USD 117.548
50 : USD 113.9969
100 : USD 110.4357

0 - WHS 6


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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STAC2942BW
STMicroelectronics

1 : USD 110.5831
10 : USD 107.7041

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STAC2942B Datasheet HF/VHF/UHF RF power N-channel MOSFET Features 1 V P 1 Order code Frequency Gain Efficiency DD OUT STAC2942BW 175 MHz 50 V 350 W 21 dB 60 % 2 Gold metallization 3 Excellent thermal stability 3 Common source push-pull configuration STAC780-4B P = 350 W min. with 21 dB gain at 175 MHz OUT In compliance with the 2002/95/EC European directive Pin connection ST air-cavity STAC packaging technology Pin Connection 1 Drain Description 2 Source (bottom side) The STAC2942B is a gold metallized N-channel MOS field-effect RF power transistor, 3 Gate intended for use in 50 V DC large signal applications up to 250 MHz. Product status link STAC2942B Product summary Order code STAC2942BW Marking STAC2942 Package STAC780-4B Packing Box Base / Bulk qty 20 / 80 DS6158 - Rev 8 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office.STAC2942B Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit (1) V Drain source voltage 130 V (BR)DSS (1) V Drain-gate voltage (R = 1 M) 130 V DRG GS V Gate-source voltage 20 V GS I Drain current 40 A D P Power dissipation 625 W DISS T Maximum operating junction temperature 200 C J T Storage temperature range -65 to +150 C STG 1. T = 150 C J 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 0.28 C/W thJC 1.3 ESD protection characteristics Table 3. ESD protection Symbol Test Methodology Class HBM Human Body Model (per JESD22-A114) 2 DS6158 - Rev 8 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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