STAC3932F STMicroelectronics

STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features Excellent thermal stability Common source push-pull configuration POUT = 580 W typ. with 24.6 dB gain 123 MHz In compliance with the 2002/95/EC European directive Description STAC244F The STAC3932F is a N-channel MOS field-effect - V Air cavity RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz. Figure 1. Pin connection 1 1 2 3. Source 2 3 1. Drain (Bottom side) 2. Gate - V Table 1. Device summary Order code Marking Package Packaging STAC3932F STAC3932F STAC244F Plastic tray March 2010 Doc ID 15513 Rev 4 1/16 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 16 change without notice. Contents STAC3932F Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedances 5 4 Electrical schematic and BOM . 6 5 Circuit layout . 8 6 Typical performance . 9 7 Package mechanical data 12 8 Revision history . 14 2/16 Doc ID 15513 Rev 4