STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs 2 2 in D PAK, DPAK, TO-220FP, I PAK and TO-220 packages TAB TAB Features 2 3 1 Order codes V R max. I Package 3 DS DS(on) D 1 2 D PAK DPAK 2 STB100N10F7 80 A D PAK TAB TAB STD100N10F7 80 A DPAK STF100N10F7 100 V 8.0 m 45 A TO-220FP 3 3 2 2 3 1 2 STI100N10F7 80 A I PAK 2 1 1 2 TO-220FP I PAK TO-220 STP100N10F7 80 A TO-220 Among the lowest R on the market DS(on) D(2, TAB) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness G(1) Applications Switching applications S(3) AM01475v1 noZen Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STB100N10F7 STD100N10F7 STF100N10F7 STI100N10F7 STP100N10F7 DS9291 - Rev 5 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value TO-220 Symbol Parameter Unit 2 DPAK TO-220FP D PAK 2 I PAK V Drain-source voltage 100 V DS V Gate-source voltage 20 V GS (1) Drain current (continuous) at T = 25 C 80 80 A C 45 I D (1) Drain current (continuous) at T = 100 C 62 70 A C 32 (2) I Drain current (pulsed) 320 180 320 A DM (1) P Total dissipation at T = 25 C 120 30 150 W TOT C Insulation withstand voltage (RMS) from all three leads to external heatsink V 2.5 kV ISO (t = 1 s, T = 25 C) C T Operating junction temperature C J -55 to 175 T Storage temperature range C stg 1. This value is limited by package. 2. Pulse width is limited by safe operating area. Table 2. Thermal resistance Value Symbol Parameter TO-220 Unit 2 DPAK TO-220FP D PAK 2 I PAK R Thermal resistance junction-case 1 1.25 5 1 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 2 1. When mounted on an 1-inch FR-4 board, 2oz CU, t < 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit Single pulse avalanche energy E 400 mJ AS (T = 25 C, L = 3.5 mH, I = 15 A, V = 50 V, V = 10 V) J AS DD GS DS9291 - Rev 5 page 2/28