Product Information

STB10LN80K5

STB10LN80K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.6582 ea
Line Total: USD 1658.2

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1000
Multiples : 1000

Stock Image

STB10LN80K5
STMicroelectronics

1000 : USD 2.6338
2000 : USD 2.6075
3000 : USD 2.5812
4000 : USD 2.5562
5000 : USD 2.53
6000 : USD 2.505
10000 : USD 2.48
20000 : USD 2.455
50000 : USD 2.43

0 - Warehouse 2


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STB10LN80K5
STMicroelectronics

1 : USD 4.9322
10 : USD 4.7983
30 : USD 4.7107
100 : USD 4.6207
500 : USD 4.6207

0 - Warehouse 3


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

STB10LN80K5
STMicroelectronics

1 : USD 8.5697
10 : USD 3.0861
25 : USD 2.9204

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
Category
Brand Category
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Additional Infomation About Product

STB10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB10LN80K5 800 V 0.63 8 A 2 Industrys lowest R x area DS(on) 3 Industrys best figure of merit (FoM) 1 Ultra-low gate charge 100% avalanche tested D PAK Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing 2 STB10LN80K5 10LN80K5 D PAK Tape and reel February 2016 DocID027750 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STB10LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 D2PAK package information ........................................................... 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027750 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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