STB10LN80K5 STMicroelectronics

STB10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB10LN80K5 800 V 0.63 8 A 2 Industrys lowest R x area DS(on) 3 Industrys best figure of merit (FoM) 1 Ultra-low gate charge 100% avalanche tested D PAK Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing 2 STB10LN80K5 10LN80K5 D PAK Tape and reel February 2016 DocID027750 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STB10LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 D2PAK package information ........................................................... 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027750 Rev 2