STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET 2 2 in I PAK, D PAK, TO-220, TO-220FP, TO-247 packages Datasheet production data Features TAB R DS(on) Type V I P DSS D w max TAB 3 3 2 STB10NK60Z-1 600 V < 0.75 10 A 115 W 2 1 1 TO-220FP STB10NK60ZT4 600 V < 0.75 10 A 115 W 2 I PAK STP10NK60Z 600 V < 0.75 10 A 115 W 3 TAB 2 1 STP10NK60ZFP 600 V < 0.75 10 A 35 W TO-220 STW10NK60Z 600 V < 0.75 10 A 156 W 3 3 Extremely high dv/dt capability 2 1 1 2 D PAK 100% avalanche tested TO-247 Gate charge minimized Zener-protected Figure 1. Internal schematic diagram Applications Switching applications Description These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well- established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB10NK60Z-1 B10NK60Z IPAK Tube STB10NK60ZT4 B10NK60Z DPAK Tape and reel STP10NK60Z P10NK60Z TO-220 Tube STP10NK60ZFP P10NK60ZFP TO-220FP Tube STW10NK60Z W10NK60Z TO-247 Tube November 2012 Doc ID 8526 Rev 11 1/24 This is information on a product in full production. www.st.com 24Contents STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) . 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packaging mechanical data 21 6 Revision history . 23 2/24 Doc ID 8526 Rev 11