NVD5C684NL Power MOSFET 60 V, 16.5 m , 38 A, Single NChannel Features Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G www.onsemi.com AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R I (BR)DSS DS(on) D Compliant 16.5 m 10 V 60 V 38 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J 24.3 m 4.5 V Parameter Symbol Value Unit D DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 38 A C D rent R (Notes 1 & 3) JC T = 100C 27 G C Steady State Power Dissipation R T = 25C P 27 W D JC C (Note 1) T = 100C 13 S C NCHANNEL MOSFET Continuous Drain Cur- T = 25C I 13 A A D rent R (Notes 1, 2 & JA T = 100C 9.0 3) A Steady 4 State Power Dissipation R T = 25C P 3.0 W JA A D (Notes 1 & 2) 2 T = 100C 1.5 1 A 3 Pulsed Drain Current T = 25C, t = 10 s I 130 A A p DM DPAK Operating Junction and Storage Temperature T , T 55 to C J stg 175 CASE 369C STYLE 2 Source Current (Body Diode) I 28 A S Single Pulse DraintoSource Avalanche E 93 mJ AS Energy (T = 25C, I = 2.0 A) MARKING DIAGRAM J L(pk) & PIN ASSIGNMENT Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 4 Drain Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit 2 JunctiontoCase (Drain) (Note 1) R 5.6 C/W JC Drain 1 3 Gate Source JunctiontoAmbient Steady State (Note 2) 50 R JA 1. The entire application environment impacts the thermal resistance values shown, A = Assembly Location they are not constants and are only valid for the particular conditions noted. Y = Year 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. WW = Work Week 3. Maximum current for pulses as long as 1 second is higher but is dependent 5C684L = Device Code on pulse duration and duty cycle. G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 1 NVD5C684NL/D AYWW 5C 684LGNVD5C684NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 10 DSS J V = 0 V, GS V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 20 A 1.2 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 15 A 13.7 16.5 m DS(on) GS D V = 4.5 V, I = 15 A 19.4 24.3 GS D Forward Transconductance g V = 5.0 V, I = 15 A 30 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 700 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 300 oss V = 25 V DS Reverse Transfer Capacitance C 13 rss Total Gate Charge Q nC V = 4.5 V 4.6 G(TOT) GS V = 48 V, DS I = 15 A D V = 10 V 9.6 GS Threshold Gate Charge Q 1.2 nC G(TH) GatetoSource Charge Q 2.0 GS V = 4.5 V, V = 48 V, GS DS I = 15 A GatetoDrain Charge Q D 1.2 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 8.0 ns d(on) Rise Time t 43 r V = 4.5 V, V = 48 V, GS DS I = 15 A, R = 2.5 TurnOff Delay Time t D G 25 d(off) Fall Time t 40 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 V SD J V = 0 V, GS I = 15 A S T = 125C 0.8 J Reverse Recovery Time t 20 ns RR Charge Time ta 10 V = 0 V, dIs/dt = 100 A/ s, GS I = 15 A S Discharge Time tb 10 Reverse Recovery Charge Q 10 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2