STB120N4F6 STMicroelectronics

STB120N4F6, STD120N4F6 Automotive-grade N-channel 40 V, 3.5 m typ., 80 A STripFET F6 Power MOSFETs in DPAK and DPAK packages Datasheet - production data Features Order codes V R max. I DS DS(on) D STB120N4F6 40 V 4 m 80 A TAB STD120N4F6 40 V 4 m 80 A TAB Designed for automotive applications and 3 3 AEC-Q101 qualified 1 1 Very low on-resistance DPAK DPAK Very low gate charge High avalanche ruggedness Low gate drive power loss Application Figure 1. Internal schematic diagram Switching applications % RU 7 Description These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET DeepGATE technology, with a new gate * structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 6 0 Y Table 1. Device summary Order codes Marking Package Packaging STB120N4F6 DPAK 120N4F6 Tape and reel STD120N4F6 DPAK September 2015 DocID17042 Rev 6 1/19 This is information on a product in full production. www.st.comContents STB120N4F6, STD120N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package information . 9 2 4.1 D PAK (TO-263) type A package information 9 4.2 DPAK (TO-252) type A2 package information . 12 5 Packaging mechanical data 15 6 Revision history . 18 2/19 DocID17042 Rev 6