X-On Electronics has gained recognition as a prominent supplier of STB120N4LF6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB120N4LF6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB120N4LF6 STMicroelectronics

STB120N4LF6 electronic component of STMicroelectronics
STB120N4LF6 STMicroelectronics
STB120N4LF6 MOSFETs
STB120N4LF6  Semiconductors

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See Product Specifications
Part No. STB120N4LF6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE
Datasheet: STB120N4LF6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.3388 ea
Line Total: USD 1338.8 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 1000
Multiples : 1000
1000 : USD 1.3388
2000 : USD 1.2912
5000 : USD 1.2825
10000 : USD 1.2742

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 7.6209
10 : USD 2.7475
25 : USD 2.5971
100 : USD 2.206

0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 25
Multiples : 1
25 : USD 1.6495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB120N4LF6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB120N4LF6 and other electronic components in the MOSFETs category and beyond.

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STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 m, 80 A DPAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes V R max I DSS DS(on) D STB120N4LF6 40 V 4.0 m 80 A STD120N4LF6 40 V 4.0 m 80 A 3 3 1 1 Logic level drive DPAK DPAK 100% avalanche tested Application Switching applications Automotive Figure 1. Internal schematic diagram Description This product is a 40 V N-channel STripFET VI Power MOSFET based on the STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order codes Marking Packages Packaging STB120N4LF6 DPAK 120N4LF6 Tape and reel STD120N4LF6 DPAK February 2011 Doc ID 16919 Rev 2 1/18 www.st.com 18 Contents STB120N4LF6, STD120N4LF6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/18 Doc ID 16919 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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