STB14NM50N STMicroelectronics

STB14NM50N N-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features Order code V T R max I DS Jmax DS(on) D STB14NM50N 550 V 0.32 12 A TAB 100% avalanche tested Low input capacitance and gate charge 3 1 Low gate input resistance 2 D PAK Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of % 7 MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is * therefore suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STB14NM50N 14NM50N DPAK Tape and reel June 2014 DocID024666 Rev 1 1/15 This is information on a product in full production. www.st.comContents STB14NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 DocID024666 Rev 1