Product Information

STB18N60M6

STB18N60M6 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.0137 ea
Line Total: USD 8.01

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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STB18N60M6
STMicroelectronics

1 : USD 8.0137
10 : USD 2.8956
25 : USD 2.7247

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STB18N60M6 Datasheet N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package Features TAB V R max. I Order code DS DS(on) D STB18N60M6 600 V 280 m 13 A 2 3 Reduced switching losses 1 Lower R per area vs previous generation DS(on) Low gate input resistance DPAK 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) LLC converters Boost PFC converters S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with one of the DS(on) most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STB18N60M6 Product summary Order code STB18N60M6 Marking 18N60M6 Package DPAK Packing Tape and reel DS12842 - Rev 2 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB18N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 13 case I A D Drain current (continuous) at T = 100 C 8.2 case (1) I Drain current (pulsed) 38 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 13 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 2 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 2.7 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 210 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12842 - Rev 2 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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