STB16N90K5 Datasheet N-channel 900 V, 280 m typ., 15 A MDmesh K5 Power MOSFET in a DPAK package Features TAB V R max. I Order code DS DS(on) D STB16N90K5 900 V 330 m 15 A 2 3 Industrys lowest R x area DS(on) 1 Industrys best FoM (figure of merit) Ultra-low gate charge DPAK 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) AM01475V1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB16N90K5 Product summary Order code STB16N90K5 Marking 16N90K5 Package DPAK Packing Tape and reel DS12802 - Rev 2 - August 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB16N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 15 A D C I Drain current (continuous) at T = 100 C 9 A D C (1) I Drain current (pulsed) 60 A D P Total power dissipation at T = 25 C 190 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 15 A, di/dt 100 A/s V peak V , V = 450 V. SD DS (BR)DSS DD 3. V 720 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.66 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 380 mJ AS j D AR DD DS12802 - Rev 2 page 2/20