Product Information

STB18NF30

STB18NF30 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 330V 18A MOS STripFET II D2PAK

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.9548 ea
Line Total: USD 5.95

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1000
Multiples : 1000

Stock Image

STB18NF30
STMicroelectronics

1000 : USD 2.059
2000 : USD 2.0385
3000 : USD 2.018
4000 : USD 1.9979
5000 : USD 1.9779
6000 : USD 1.9581
10000 : USD 1.9385
20000 : USD 1.9191
50000 : USD 1.9

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STB18NF30
STMicroelectronics

1 : USD 5.6448
10 : USD 4.8884
100 : USD 3.9299
500 : USD 3.2288

0 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STB18NF30
STMicroelectronics

1 : USD 5.6448
10 : USD 4.8884
100 : USD 3.9299
500 : USD 3.2288

0 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1000
Multiples : 1000

Stock Image

STB18NF30
STMicroelectronics

1000 : USD 2.7744

0 - WHS 5


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

STB18NF30
STMicroelectronics

1 : USD 5.9548
10 : USD 2.1541
25 : USD 2.0298
100 : USD 1.7295
500 : USD 1.4292
1000 : USD 1.1806

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Qualification
Tradename
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STB18NF30 Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DSS DS(on) D TAB STB18NF30 330 V 180 m 18 A Designed for automotive applications and AEC-Q101 qualified 3 100% avalanche tested 1 175 C junction temperature DPAK Applications Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET has been developed using % 7 RU STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC * converters for telecom and computer applications, and applications with low gate charge driving requirements. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STB18NF30 18NF30 DPAK Tape and reel August 2013 DocID018590 Rev 3 1/15 This is information on a product in full production. www.st.comContents STB18NF30 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 DocID018590 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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