STB18NF30 STMicroelectronics

STB18NF30 Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DSS DS(on) D TAB STB18NF30 330 V 180 m 18 A Designed for automotive applications and AEC-Q101 qualified 3 100% avalanche tested 1 175 C junction temperature DPAK Applications Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET has been developed using % 7 RU STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC * converters for telecom and computer applications, and applications with low gate charge driving requirements. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STB18NF30 18NF30 DPAK Tape and reel August 2013 DocID018590 Rev 3 1/15 This is information on a product in full production. www.st.comContents STB18NF30 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 DocID018590 Rev 3