STB180N55F3 STMicroelectronics

STB180N55F3 STP180N55F3 2 N-channel 55V - 3.2m - 120A - D PAK/TO-220 STripFET Power MOSFET Features Type V R I Pw DSS DS(on) D (1) STB180N55F3 55V 3.5m 120A 330W (1) STP180N55F3 55V 3.8m 120A 330W 1. Value limited by wire bonding 3 3 1 2 1 Ultra low on-resistance 2 100% avalanche tested TO-220 D PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique single feature size strip-based process with less critical alignment Internal schematic diagram steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Application Switching applications Order codes Part number Marking Package Packaging 2 STB180N55F3 180N55F3 D PAK Tape & reel STP180N55F3 180N55F3 TO-220 Tube June 2007 Rev 2 1/14 www.st.com 14 Obsolete Product(s) - Obsolete Product(s)Contents STB180N55F3 - STP180N55F3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 13 2/14 Obsolete Product(s) - Obsolete Product(s)