Product Information

STB24N60DM2

STB24N60DM2 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7241 ea
Line Total: USD 2.72

1344 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1293 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

STB24N60DM2
STMicroelectronics

1 : USD 2.6403
10 : USD 2.2537
30 : USD 2.0119
100 : USD 1.7643
500 : USD 1.5608
1000 : USD 1.5105

Read More Specifications

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

The STB24N60DM2 Transistor is a high-performance N-channel MOSFET (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. It is a unipolar device that features a breakdown voltage of 600V and a continuous drain current rating of up to 11A. The device has an avalanche energy rating up to 150W and can be easily mounted onto a D2PAK package. The device is used for applications in Switch-Mode Power Supplies, Motor controls, and Audio amplifiers. The optimized design provides a high voltage, high-speed switching with excellent thermal characteristics for efficient operation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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