STB24N60M2 STMicroelectronics

STB24N60M2 electronic component of STMicroelectronics
STB24N60M2 STMicroelectronics
STB24N60M2 MOSFETs
STB24N60M2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STB24N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB24N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. STB24N60M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2
Datasheet: STB24N60M2 Datasheet (PDF)
Price (USD)
1000: USD 0.7345 ea
Line Total: USD 734.5 
Availability : 0
  
QtyUnit Price
1000$ 0.7345
2000$ 0.728
3000$ 0.728

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 4.1857
2000$ 4.151
3000$ 4.1161
4000$ 4.0813
5000$ 4.0462
6000$ 4.0111
10000$ 3.9759
20000$ 3.9405
50000$ 3.9049


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.9795
10$ 2.6325
25$ 2.4024
100$ 2.3777
250$ 2.2405
500$ 2.2405
1000$ 2.2405


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 3.4001


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.44
10$ 5.5741
100$ 4.5669
500$ 3.8876


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.7345
2000$ 0.728
3000$ 0.728


Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.6548
10$ 3.1093
25$ 2.949


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 6
Multiples : 1
QtyUnit Price
6$ 1.621
10$ 1.5562


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 1.8481


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.9293
10$ 5.7985
30$ 5.7121
100$ 5.6255


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.44
10$ 5.5741
100$ 4.5669
500$ 3.8876

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Tradename
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB24N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB24N60M2 and other electronic components in the MOSFETs category and beyond.

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The STB24N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics, featuring a maximum continuous drain-source voltage of 600V, a maximum gate-source voltage of 20V, and a maximum drain current of 18A. It is part of the MDmesh M2 series of MOSFETs, which offer superior power switching performance for various applications. This transistor has a low on-resistance of 0.168O and a fast intrinsic gate switching speed which makes it suitable for use in high-performance switching circuits. The device also features a rugged gate oxide design for protection against cathode stripping, a self-aligned double-diffused (SAD) technology for very low gate input capacitance, and a small form factor that allows for easy implementation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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