STB24NM60N STMicroelectronics

STB24NM60N N-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFET in a DPAK package Datasheet production data Features Order code V Tjmax R max. I DS DS(on) D TAB STB24NM60N 650 V 0.19 17 A 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance 2 D PAK Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of % 7 RU MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STB24NM60N 24NM60N D PAK Tape and reel July 2014 DocID018484 Rev 2 1/14 This is information on a product in full production. www.st.comContents STB24NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID018484 Rev 2