Product Information

STB24NM60N

Name: STB24NM60N
Brand: STMicroelectronics
SKU: STB24NM60N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB24NM60N electronic component of STMicroelectronics

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Datasheet

MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 2.112 ea
Line Total: USD 2112

0 - Global Stock

MOQ: 1000 Multiples: 1000
Pack Size: 1000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1000 Multiples : 1000 STB24NM60N STMicroelectronics	1000 : USD 5.7567 2000 : USD 5.7004 3000 : USD 5.6427 4000 : USD 5.5864 5000 : USD 5.5301 6000 : USD 5.4751 10000 : USD 5.4201 20000 : USD 5.3664 50000 : USD 5.3128

0 - WHS 2 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 STB24NM60N STMicroelectronics	1 : USD 4.3355 5 : USD 3.9065

0 - WHS 3 Ships to you between Thu. 30 May to Mon. 03 Jun MOQ : 1 Multiples : 1 STB24NM60N STMicroelectronics	1 : USD 8.5359 10 : USD 5.6417

0 - WHS 4 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1000 Multiples : 1000 STB24NM60N STMicroelectronics	1000 : USD 2.112

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Additional Infomation About Product

STB24NM60N N-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFET in a DPAK package Datasheet production data Features Order code V Tjmax R max. I DS DS(on) D TAB STB24NM60N 650 V 0.19 17 A 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance 2 D PAK Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of % 7 RU MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STB24NM60N 24NM60N D PAK Tape and reel July 2014 DocID018484 Rev 2 1/14 This is information on a product in full production. www.st.comContents STB24NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID018484 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 17 A 17 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 168 mOhms 168 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Pd - Power Dissipation 125 W 125 W
Mounting Style Smd/Smt Smd/Smt
Package / Case D2PAK D2PAK
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 46 nC 46 nC
Tradename Mdmesh Mdmesh
Series Stb24nm60n Stb24nm60n
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 17 A 17 A
Drain-Source Breakdown Voltage 600 V 600 V
Gate-Source Breakdown Voltage 30 V 30 V
Power Dissipation 125 W 125 W
Rds On 168 Mohms 168 Mohms
Fall Time 37 ns 37 ns
Gate Charge Qg 46 nC 46 nC
Rise Time 16.5 ns 16.5 ns
Factory Pack Quantity : 1000 1000
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000