X-On Electronics has gained recognition as a prominent supplier of STB24NM60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB24NM60N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB24NM60N STMicroelectronics

Name: STB24NM60N
Brand: STMicroelectronics
SKU: STB24NM60N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB24NM60N electronic component of STMicroelectronics

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See Product Specifications

Part No.	STB24NM60N
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II
Datasheet:	STB24NM60N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 2.0471 ea
Line Total: USD 2047.1

Availability - 0

MOQ: 1000 Multiples: 1000
Pack Size: 1000

STB24NM60N More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 25 Jun to Tue. 01 Jul MOQ : 1000 Multiples : 1000	1000 : USD 3.5388

0 Ship by Wed. 25 Jun to Tue. 01 Jul MOQ : 1 Multiples : 1	1 : USD 4.2021 5 : USD 3.7863

0 Ship by Mon. 23 Jun to Wed. 25 Jun MOQ : 1 Multiples : 1	1 : USD 8.2733 10 : USD 5.4681

0 Ship by Wed. 25 Jun to Tue. 01 Jul MOQ : 1000 Multiples : 1000	1000 : USD 2.0471

We are delighted to provide the STB24NM60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB24NM60N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB24NM60N N-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFET in a DPAK package Datasheet production data Features Order code V Tjmax R max. I DS DS(on) D TAB STB24NM60N 650 V 0.19 17 A 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance 2 D PAK Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of % 7 RU MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STB24NM60N 24NM60N D PAK Tape and reel July 2014 DocID018484 Rev 2 1/14 This is information on a product in full production. www.st.comContents STB24NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 DocID018484 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 17 A 17 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 168 mOhms 168 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Pd - Power Dissipation 125 W 125 W
Mounting Style smd/smt smd/smt
Package / Case D2PAK D2PAK
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 46 nC 46 nC
Tradename mdmesh mdmesh
Series stb24nm60n stb24nm60n
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 17 A 17 A
Drain-Source Breakdown Voltage 600 V 600 V
Gate-Source Breakdown Voltage 30 V 30 V
Power Dissipation 125 W 125 W
Rds On 168 mohms 168 mohms
Fall Time 37 ns 37 ns
Gate Charge Qg 46 nC 46 nC
Rise Time 16.5 ns 16.5 ns
Factory Pack Quantity : 1000 1000
Configuration single single
Transistor Type 1 n - channel 1 n - channel
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000