Product Information

STB25NF06LAG

STB25NF06LAG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 60 V, 53 mOhm typ., 20 A STripFET II Power MOSFET in a D2PAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6415 ea
Line Total: USD 0.64

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

STB25NF06LAG
STMicroelectronics

1 : USD 0.0328
10 : USD 0.0323
25 : USD 0.0318
50 : USD 0.0311
100 : USD 0.0306
250 : USD 0.03
500 : USD 0.03
1000 : USD 0.03

0 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

STB25NF06LAG
STMicroelectronics

1 : USD 3.547
10 : USD 1.3377
100 : USD 0.9952
500 : USD 0.8223
1000 : USD 0.6483
2000 : USD 0.6286

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

STB25NF06LAG Automotive-grade N-channel 60 V, 53 m typ., 20 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STB25NF06LAG 60 V 70 m 20 A 60 W 2 AEC-Q101 qualified 3 Exceptional dv/dt capability 1 100% avalanche tested Low gate charge D PAK Applications Switching applications Figure 1: Internal schematic diagram Description This Power MOSFET series realized with D(2, TAB) STMicroelectronics unique STripFET process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and G(1) Computer applications. It is also suitable for any application with low gate charge drive requirements. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STB25NF06LAG 25NF06L DPAK Tape and reel November 2016 DocID030043 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB25NF06LAG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information .............................................................. 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID030043 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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