UF3C065040K3S UnitedSiC

UF3C065040K3S electronic component of UnitedSiC
UF3C065040K3S UnitedSiC
UF3C065040K3S MOSFETs
UF3C065040K3S  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UF3C065040K3S MOSFETs across the USA, India, Europe, Australia, and various other global locations. UF3C065040K3S MOSFETs are a product manufactured by UnitedSiC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. UF3C065040K3S
Manufacturer: UnitedSiC
Category: MOSFETs
Description: MOSFET 650V/40mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
Datasheet: UF3C065040K3S Datasheet (PDF)
Price (USD)
1: USD 43.498 ea
Line Total: USD 43.5 
Availability : 3
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 43.498
2$ 41.118

Availability 3
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 43.498
2$ 41.118

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the UF3C065040K3S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UF3C065040K3S and other electronic components in the MOSFETs category and beyond.

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UF3C065040K3S is a high-efficiency, low-RDS(on) FET from UnitedSiC, designed for use in high-current, high-power applications. This FET reduces conduction losses and heat dissipation by using advanced silicon carbide (SiC) technology. It has a continuous drain current of 40A, a maximum drain-source voltage of 650V, and an RDS(on) of 175mOhms. Additionally, this FET is equipped with 7th generation U-MOS technology, making it highly reliable and suitable for a variety of high-power applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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