STB36NM60N STMicroelectronics

STB36NM60N Automotive-grade N-channel 600 V, 0.093 , 29 A, MDmesh II Power MOSFET in a DPAK package Datasheet production data Features V DS R DS(on) Order code I P D TOT TAB max. T Jmax STB36NM60N 650 V 0.105 29 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 100% avalanche tested 2 D PAK Low input capacitance and gate charge Low gate input resistance Applications Figure 1. Internal schematic diagram Switching applications % 7 Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power * MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high 6 efficiency converters. 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STB36NM60N 36NM60N D PAK Tape and reel June 2015 DocID16099 Rev 5 1/15 This is information on a product in full production. www.st.comContents STB36NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 12 6 Revision history . 14 2/15 DocID16099 Rev 5