STB35N65M5 STMicroelectronics

STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFET in DPAK, TO-220FP, IPAK, TO-220, TO-247 Features V DSS Type R max. I DS(on) D T 3 JMAX 3 1 2 3 1 2 STB35N65M5 710 V < 0.098 27 A 1 DPAK IPAK (1) STF35N65M5 710 V < 0.098 27 A TO-220FP STI35N65M5 710 V < 0.098 27 A STP35N65M5 710 V < 0.098 27 A STW35N65M5 710 V < 0.098 27 A 1. Limited only by maximum temperature allowed 3 3 2 2 1 1 Worldwide best R * area DS(on) TO-220 TO-247 Higher V rating DSS Excellent switching performance Easy to drive Figure 1. Internal schematic diagram 100% avalanche tested High dv/dt capability Applications Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative 3 proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The - V resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB35N65M5 35N65M5 DPAK Tape and reel STF35N65M5 35N65M5 TO-220FP Tube STI35N65M5 35N65M5 IPAK Tube STP35N65M5 35N65M5 TO-220 Tube STW35N65M5 35N65M5 TO-247 Tube October 2011 Doc ID 15325 Rev 3 1/22 www.st.com 22Contents STB/F/I/P/W35N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 Doc ID 15325 Rev 3