STB85NF55T4 STMicroelectronics

STB85NF55T4 electronic component of STMicroelectronics
STB85NF55T4 STMicroelectronics
STB85NF55T4 MOSFETs
STB85NF55T4  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of STB85NF55T4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB85NF55T4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. STB85NF55T4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch 55 Volt 80 Amp
Datasheet: STB85NF55T4 Datasheet (PDF)
Price (USD)
1000: USD 0.9771 ea
Line Total: USD 977.1 
Availability : 0
  
QtyUnit Price
1000$ 0.9771

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 1.2246
2000$ 1.2007


Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 1.155
2000$ 1.1


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.9771

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Forward Transconductance - Min
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We are delighted to provide the STB85NF55T4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB85NF55T4 and other electronic components in the MOSFETs category and beyond.

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STB85NF55T4, STP85NF55 Datasheet Automotive-grade N-channel 55 V, 6.2 m typ., 80 A, STripFET II Power MOSFETs in DPAK and TO-220 packages Features V R max. I Type DS DS(on) D TAB TAB STB85NF55T4 55 V 8.0 m 80 A STP85NF55 3 1 3 2 D PAK TO-220 2 1 AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested D(2, TAB) Low gate charge Applications Switching applications G(1) Description S(3) These Power MOSFETs have been developed using STMicroelectronics unique AM01475v1 noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STB85NF55T4 STP85NF55 Product summary Order code STB85NF55T4 Marking B85NF55 Package DPAK Packing Tape and reel Order code STP85NF55 Marking P85NF55 Package TO-220 Packing Tube DS2569 - Rev 12 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB85NF55T4, STP85NF55 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 55 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 80 A C (1) I D Drain current (continuous) at T = 100 C 80 A C (2) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C 300 W TOT C Derating factor 2.0 W/C (3) E Single-pulse avalanche energy 980 mJ AS (4) dv/dt Peak diode recovery voltage slope 10 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting T = 25 C, I = 40 A, V = 37.5 V J D DD 4. I 80 A, di/dt 300 A/s, V V , T T SD DD (BR)DSS J JMAX Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb DS2569 - Rev 12 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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