Product Information

STB85NF55T4

STB85NF55T4 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 55 Volt 80 Amp

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.0081 ea
Line Total: USD 1008.1

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STB85NF55T4
STMicroelectronics

1000 : USD 2.5168
2000 : USD 2.4921
3000 : USD 2.4674
4000 : USD 2.4427
5000 : USD 2.418
6000 : USD 2.3933
10000 : USD 2.3699
20000 : USD 2.3465
50000 : USD 2.3231

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STB85NF55T4
STMicroelectronics

1 : USD 5.7474
10 : USD 2.0732
25 : USD 1.9603
100 : USD 1.6729
500 : USD 1.3753
1000 : USD 1.1289
2000 : USD 1.0879

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STB85NF55T4
STMicroelectronics

1000 : USD 1.0081

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Number of Channels
Vgs - Gate-Source Voltage
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Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Type
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Cnhts
Hts Code
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STB85NF55T4, STP85NF55 Datasheet Automotive-grade N-channel 55 V, 6.2 m typ., 80 A, STripFET II Power MOSFETs in DPAK and TO-220 packages Features V R max. I Type DS DS(on) D TAB TAB STB85NF55T4 55 V 8.0 m 80 A STP85NF55 3 1 3 2 D PAK TO-220 2 1 AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested D(2, TAB) Low gate charge Applications Switching applications G(1) Description S(3) These Power MOSFETs have been developed using STMicroelectronics unique AM01475v1 noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STB85NF55T4 STP85NF55 Product summary Order code STB85NF55T4 Marking B85NF55 Package DPAK Packing Tape and reel Order code STP85NF55 Marking P85NF55 Package TO-220 Packing Tube DS2569 - Rev 12 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB85NF55T4, STP85NF55 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 55 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 80 A C (1) I D Drain current (continuous) at T = 100 C 80 A C (2) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C 300 W TOT C Derating factor 2.0 W/C (3) E Single-pulse avalanche energy 980 mJ AS (4) dv/dt Peak diode recovery voltage slope 10 V/ns T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting T = 25 C, I = 40 A, V = 37.5 V J D DD 4. I 80 A, di/dt 300 A/s, V V , T T SD DD (BR)DSS J JMAX Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb DS2569 - Rev 12 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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