Product Information

STD130N4F6AG

STD130N4F6AG electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.9095 ea
Line Total: USD 3.91

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STD130N4F6AG
STMicroelectronics

1 : USD 3.9095
10 : USD 1.4671
100 : USD 1.0978
500 : USD 0.9051
1000 : USD 0.7145
2500 : USD 0.6918

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2500
Multiples : 2500

Stock Image

STD130N4F6AG
STMicroelectronics

2500 : USD 0.7665

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STD130N4F6AG Automotive-grade N-channel 40 V, 3.0 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features V R max. I Order code DS DS(on) D % STD130N4F6AG 40 V 3.6 m 80 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness . 3 Low gate drive power loss Applications Figure 1. Internal schematic diagram Switching applications % 7 Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting * Power MOSFET exhibits very low R in all DS(on) packages. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STD130N4F6AG 130N4F6 DPAK Tape and reel February 2015 DocID027413 Rev 2 1/16 This is information on a product in full production. www.st.com 7 Contents STD130N4F6AG Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID027413 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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