STB6N60M2 STMicroelectronics

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh M2 2 Power MOSFETs in D PAK and DPAK packages Datasheet - production data Features V R DS DS(on) Order code I D T max Jmax TAB STB6N60M2 TAB 650 V 1.2 4.5 A STD6N60M2 3 3 1 1 Extremely low gate charge 2 DPAK D PAK Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications , TAB Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packing 2 STB6N60M2 D PAK 6N60M2 Tape and reel STD6N60M2 DPAK May 2016 DocID024772 Rev 3 1/21 This is information on a product in full production. www.st.comContents STB6N60M2, STD6N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package information 10 4.1 DPAK(TO-263) package information .11 4.2 DPAK(TO-252) package information 14 5 Packing information 17 6 Revision history . 20 2/21 DocID024772 Rev 3