STB95N3LLH6 STMicroelectronics

STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 2 N-channel 30 V, 0.0037 , 80 A, D PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type V R max I DSS DS(on) D 3 1 3 STB95N3LLH6 30 V 0.0042 80 A 2 DPAK 1 STD95N3LLH6 30 V 0.0042 80 A STP95N3LLH6 30 V 0.0042 80 A IPAK STU95N3LLH6 30 V 0.0047 80 A R * Q industry benchmark DS(on) g 3 Extremely low on-resistance R 1 DS(on) 3 2 1 High avalanche ruggedness DPAK TO-220 Low gate drive power losses Application Figure 1. Internal schematic diagram Switching applications D (TAB or 2) Description This product utilizes the 6th generation of design rules of STs proprietary STripFET technology, with a new gate structure.The resulting Power G(1) MOSFET exhibits the lowest R in all DS(on) packages. S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STB95N3LLH6 95N3LLH6 DPAK Tape and reel STD95N3LLH6 95N3LLH6 DPAK Tape and reel STP95N3LLH6 95N3LLH6 TO-220 Tube STU95N3LLH6 95N3LLH6 IPAK Tube November 2009 Doc ID 15228 Rev 3 1/18 www.st.com 18 Contents STx95N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/18 Doc ID 15228 Rev 3