Product Information

STBR6012WY

STBR6012WY electronic component of STMicroelectronics

Datasheet
Rectifiers High voltage rectifier for bridge applications

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 2.6573 ea
Line Total: USD 7.97

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 600
Multiples : 1

Stock Image

STBR6012WY
STMicroelectronics

600 : USD 4.2825
1000 : USD 4.24
2000 : USD 4.1975
2500 : USD 4.1562
3000 : USD 4.1138
4000 : USD 4.0725
5000 : USD 4.0325
10000 : USD 3.9925
20000 : USD 3.9525
50000 : USD 3.9125

0 - Warehouse 2


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

STBR6012WY
STMicroelectronics

1 : USD 6.0455
10 : USD 3.959
100 : USD 3.2429
500 : USD 2.7654

0 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3
Multiples : 1

Stock Image

STBR6012WY
STMicroelectronics

3 : USD 2.6573
10 : USD 2.5

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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STBR6012-Y Automotive high voltage rectifier for bridge applications Datasheet - production data Description A K The high quality design of this diode results in a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Thanks to its ultra-low conduction losses, this A diode is especially suitable for use as input bridge diode in battery chargers. K Table 1: Device summary DO-247 Symbol Value I 60 A F(AV) Features VRRM 1200 V AEC-Q101 qualified VF (typ.) 0.95 V Ultra-low conduction losses Tj -40 to +175 C Ultra-low reverse losses High junction temperature capability V guaranteed from -40 to +175 C RRM ECOPACK 2 compliant component PPAP capable November 2016 DocID029942 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STBR6012-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRSM Non-repetitive surge reverse voltage 1500 V V Repetitive peak reverse voltage T = -40 C to +175 C 1200 V RRM j IF(RMS) Forward rms current 90 A T = 135 C, C IF(AV) Average forward current 60 A = 0.5 square wave Surge non repetitive forward t = 10 ms sinusoidal IFSM p 500 A current Tstg Storage temperature range -65 to +175 C T Operating junction temperature range -40 to +175 C j Table 3: Thermal parameters Symbol Parameter Max. value Unit R Junction to case 0.45 C/W th(j-c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 5 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 25 250 j Tj = 25 C - 1.05 1.3 (2) VF Forward voltage drop IF = 60 A V T = 150 C - 0.95 1.2 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.96 x I + 0.004 x I F(AV) F (RMS) 2/8 DocID029942 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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