STBR6012WY STMicroelectronics

STBR6012-Y Automotive high voltage rectifier for bridge applications Datasheet - production data Description A K The high quality design of this diode results in a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Thanks to its ultra-low conduction losses, this A diode is especially suitable for use as input bridge diode in battery chargers. K Table 1: Device summary DO-247 Symbol Value I 60 A F(AV) Features VRRM 1200 V AEC-Q101 qualified VF (typ.) 0.95 V Ultra-low conduction losses Tj -40 to +175 C Ultra-low reverse losses High junction temperature capability V guaranteed from -40 to +175 C RRM ECOPACK 2 compliant component PPAP capable November 2016 DocID029942 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STBR6012-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRSM Non-repetitive surge reverse voltage 1500 V V Repetitive peak reverse voltage T = -40 C to +175 C 1200 V RRM j IF(RMS) Forward rms current 90 A T = 135 C, C IF(AV) Average forward current 60 A = 0.5 square wave Surge non repetitive forward t = 10 ms sinusoidal IFSM p 500 A current Tstg Storage temperature range -65 to +175 C T Operating junction temperature range -40 to +175 C j Table 3: Thermal parameters Symbol Parameter Max. value Unit R Junction to case 0.45 C/W th(j-c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 5 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 25 250 j Tj = 25 C - 1.05 1.3 (2) VF Forward voltage drop IF = 60 A V T = 150 C - 0.95 1.2 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.96 x I + 0.004 x I F(AV) F (RMS) 2/8 DocID029942 Rev 1