Product Information

STD120N4LF6

Name: STD120N4LF6
Brand: STMicroelectronics
SKU: STD120N4LF6_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STD120N4LF6 electronic component of STMicroelectronics

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Datasheet

MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 4.4532 ea
Line Total: USD 4.45

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 2500 Multiples : 2500 STD120N4LF6 STMicroelectronics	2500 : USD 1.1068 5000 : USD 1.0578

0 - WHS 2 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 2500 Multiples : 2500 STD120N4LF6 STMicroelectronics	2500 : USD 1.1189

0 - WHS 3 Ships to you between Mon. 27 May to Wed. 29 May MOQ : 1 Multiples : 1 STD120N4LF6 STMicroelectronics	1 : USD 4.4532 10 : USD 1.6052 25 : USD 1.512 100 : USD 1.2945 500 : USD 1.0667 1000 : USD 0.8782

0 - WHS 4 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 2500 Multiples : 2500 STD120N4LF6 STMicroelectronics	2500 : USD 1.2155

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Additional Infomation About Product

STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 m, 80 A DPAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes V R max I DSS DS(on) D STB120N4LF6 40 V 4.0 m 80 A STD120N4LF6 40 V 4.0 m 80 A 3 3 1 1 Logic level drive DPAK DPAK 100% avalanche tested Application Switching applications Automotive Figure 1. Internal schematic diagram Description This product is a 40 V N-channel STripFET VI Power MOSFET based on the STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order codes Marking Packages Packaging STB120N4LF6 DPAK 120N4LF6 Tape and reel STD120N4LF6 DPAK February 2011 Doc ID 16919 Rev 2 1/18 www.st.com 18 Contents STB120N4LF6, STD120N4LF6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/18 Doc ID 16919 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 80 A 80 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Rds On - Drain-Source Resistance 3.6 mOhms 3.6 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 110 W 110 W
Mounting Style Smd/Smt Smd/Smt
Package / Case DPAK DPAK
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 80 nC 80 nC
Qualification Aec - Q101 Aec - Q101
Tradename Stripfet Stripfet
Configuration Single Single
Series Std120n4lf6 Std120n4lf6
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 80 A 80 A
Drain-Source Breakdown Voltage 40 V 40 V
Power Dissipation 110 W 110 W
Rds On 3.6 Mohms 3.6 Mohms
Gate Charge Qg 80 nC 80 nC
Factory Pack Quantity : 2500 2500
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85423399 85423399
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets