The STD12N60DM2AG is an N-channel enhancement-mode Field-Effect Transistor (FET) manufactured by STMicroelectronics. It has a drain-source voltage rating of 1200 V, maximum gate-source voltage of ±20 V, drain current rating of 60 A, maximum power dissipation of 268W, RDS(on) of 2.17 O in pulsed operation, maximum junction temperature of 175 °C, and a total gate charge of 227 nC. This transistor is suitable for high-voltage applications, such as DC-DC converters, solenoid and relay drivers, motor control, and high-frequency switching. It is especially suitable for high current, high temperature, and high frequency switching applications. The package options are available in TO-220, TO-MB236AC, and LGA232.