STD12N60DM2AG STMicroelectronics

STD12N60DM2AG electronic component of STMicroelectronics
STD12N60DM2AG STMicroelectronics
STD12N60DM2AG MOSFETs
STD12N60DM2AG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STD12N60DM2AG MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD12N60DM2AG MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. STD12N60DM2AG
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET PTD HIGH VOLTAGE
Datasheet: STD12N60DM2AG Datasheet (PDF)
Price (USD)
1: USD 2.3785 ea
Line Total: USD 2.38 
Availability : 0
  
QtyUnit Price
1$ 2.3785
10$ 2.059
30$ 1.8595
100$ 1.6541
500$ 1.5611
1000$ 1.5224

Availability 0
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.3785
10$ 2.059
30$ 1.8595
100$ 1.6541
500$ 1.5611
1000$ 1.5224


Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.0287
10$ 1.4299
100$ 1.0644
500$ 0.9022
1000$ 0.754
5000$ 0.6993
10000$ 0.6725
25000$ 0.6565

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD12N60DM2AG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD12N60DM2AG and other electronic components in the MOSFETs category and beyond.

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The STD12N60DM2AG is an N-channel enhancement-mode Field-Effect Transistor (FET) manufactured by STMicroelectronics. It has a drain-source voltage rating of 1200 V, maximum gate-source voltage of ±20 V, drain current rating of 60 A, maximum power dissipation of 268W, RDS(on) of 2.17 O in pulsed operation, maximum junction temperature of 175 °C, and a total gate charge of 227 nC. This transistor is suitable for high-voltage applications, such as DC-DC converters, solenoid and relay drivers, motor control, and high-frequency switching. It is especially suitable for high current, high temperature, and high frequency switching applications. The package options are available in TO-220, TO-MB236AC, and LGA232.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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