DirectFET Power MOSFET RoHs Compliant Containing No Lead and Bromide V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 25V max 16V max 3.2m 10V 4.5m 4.5V Dual Sided Cooling Compatible Low Package Inductance Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 8.8nC 3.1nC 1.1nC 22nC 13nC 1.6V Ideal for CPU Core DC-DC Converters Optimized for Control FET socket of Sync. Buck Converter Low Conduction and Switching Losses G G D D Compatible with existing Surface Mount Techniques S S 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SA MQ MX MT MP MB Description The IRF6802SDTRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Absolute Maximum Ratings Parameter Max. Units V 25 DS Drain-to-Source Voltage V V Gate-to-Source Voltage 16 GS Continuous Drain Current, V 10V 16 I T = 25C A GS D Continuous Drain Current, V 10V 13 I T = 70C GS A D A I T = 25C Continuous Drain Current, V 10V 57 GS D C 130 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 66 mJ AS I Avalanche Current 13 A AR 10 14.0 I = 13A I = 16A D V = 20V D 12.0 DS 8 V = 13V DS 10.0 V = 6.0V DS 6 T = 125C 8.0 J 6.0 4 4.0 2 T = 25C 2.0 J 0 0.0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.78mH, R = 50, I = 13A. Surface mounted on 1 in. square Cu board, steady state. J G AS Typical R (m) DS(on) V , Gate-to-Source Volta ge (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 25 V DSS GS D Reference to 25C, I = 1.0mA V /T Breakdown Voltage Temp. Coefficient 0.02 V/C D DSS J V = 10V, I = 16A R Static Drain-to-Source On-Resistance 3.2 4.2 m GS D DS(on) V = 4.5V, I = 13A 4.5 5.9 GS D = V , I = 35A V Gate Threshold Voltage 1.1 1.6 2.1 V V GS(th) DS GS D V / T V = V , I = 35A Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) J DS GS D V = 20V, V = 0V I Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 20V, V = 0V, T = 125C 150 DS GS J V = 16V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -16V Gate-to-Source Reverse Leakage -100 GS V =13V, I = 13A gfs Forward Transconductance 160 S DS D Q Total Gate Charge 8.8 13 g = 13V Q Pre-Vth Gate-to-Source Charge 2.3 V DS gs1 Q V = 4.5V Post-Vth Gate-to-Source Charge 1.1 nC gs2 GS Q I = 13A Gate-to-Drain Charge 3.1 D gd Q Gate Charge Overdrive 2.3 See Fig.15 godr Q Switch Charge (Q + Q ) 4.2 sw gs2 gd V = 20V, V = 0V Q Output Charge 13 nC DS GS oss R Gate Resistance 0.70 G V = 13V, V = 4.5V t Turn-On Delay Time 9.7 DD GS d(on) t I = 13A Rise Time 50 ns r D t Turn-Off Delay Time 13 R = 1.5 d(off) G t See Fig.17 Fall Time 23 f V = 0V C Input Capacitance 1350 GS iss C V = 13V Output Capacitance 400 pF oss DS C Reverse Transfer Capacitance 97 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current D S 26 (Body Diode) A showing the G I integral reverse Pulsed Source Current SM 130 S (Body Diode) p-n junction diode. V T = 25C, I = 13A, V = 0V Diode Forward Voltage 1.0 V SD J S GS T = 25C, I = 13A t Reverse Recovery Time 18 27 ns J F rr Q di/dt = 260A/s Reverse Recovery Charge 22 33 nC rr Pulse width 400s duty cycle 2%.