STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 typ., 1.2 A SuperMESH3 Power MOSFET in DPAK and IPAK packages Datasheet production data Features R DS(on) Order codes V I P DS D TOT max STD1HN60K3 TAB TAB 600 V 8 1.2 A 27 W STU1HN60K3 3 3 1 2 1 100% avalanche tested DPAK IPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2, TAB) Applications Switching applications Description G(1) These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- S(3) resistance, superior dynamic performance and AM01476v1 high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STD1HN60K3 DPAK Tape and reel 1HN60K3 STU1HN60K3 IPAK Tube April 2013 DocID024422 Rev 1 1/19 This is information on a product in full production. www.st.com 19Contents STD1HN60K3, STU1HN60K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 18 2/19 DocID024422 Rev 1