STD25NF10LA

STD25NF10LA N-channel 100 V, 0.030 , 25 A DPAK STripFET II Power MOSFET Features Order code V R max I DSS DS(on) D STD25NF10LA 100 V < 0.035 25 A TAB Exceptional dv/dt capability 3 100% avalanche tested 1 Logic level device DPAK Applications Switching application Automotive Description Figure 1. Internal schematic diagram This Power MOSFET has been developed using D(TAB) STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving G(1) requirements. S(3) AM09016v1 Table 1. Device summary Order code Marking Package Packaging STD25NF10LA D25NF10LA DPAK Tape and reel October 2011 Doc ID 022319 Rev 1 1/15 www.st.com 15Contents STD25NF10LA Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 8 4 Package mechanical data . 9 5 Packing mechanical data 12 6 Revision history . 14 2/15 Doc ID 022319 Rev 1