Product Information

STD2LN60K3

STD2LN60K3 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 1.26A; 45W; DPAK

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.416 ea
Line Total: USD 1040

2425 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2500
Multiples : 2500

Stock Image

STD2LN60K3
STMicroelectronics

2500 : USD 0.416
5000 : USD 0.416
7500 : USD 0.416
10000 : USD 0.416
12500 : USD 0.416

805 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STD2LN60K3
STMicroelectronics

1 : USD 0.6888
10 : USD 0.6143
30 : USD 0.5781
100 : USD 0.5417
500 : USD 0.5196
1000 : USD 0.5096

539 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STD2LN60K3
STMicroelectronics

1 : USD 1.248
5 : USD 0.5642
25 : USD 0.455
38 : USD 0.4355
100 : USD 0.4173

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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STD2LN60K3, STF2LN60K3, STU2LN60K3 N-channel 600 V, 4 typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages Datasheet production data Features TAB R DS(on) Order codes V I P DSS D TOT 3 max 1 3 2 STD2LN60K3 45 W DPAK 1 STF2LN60K3 600 V < 4.5 2 A 20 W TO-220FP STU2LN60K3 45 W TAB 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Very low intrinsic capacitance IPAK Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram Applications D(2,TAB) Switching applications Description These SuperMESH3 Power MOSFETs are the G(1) result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable S(3) for the most demanding applications. AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STD2LN60K3 DPAK Tape and reel STF2LN60K3 2LN60K3 TO-220FP Tube STU2LN60K3 IPAK July 2012 Doc ID 023500 Rev 1 1/20 This is information on a product in full production. www.st.com 20Contents STD2LN60K3, STF2LN60K3, STU2LN60K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 17 6 Revision history . 19 2/20 Doc ID 023500 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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