STD2805T4 STMicroelectronics

STD2805 Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3 3 package in tape & reel (suffix T4) 2 1 1 Through-hole IPAK (TO-251) power package TO-252 TO-251 in tube (suffix -1) DPAK IPAK (suffix T4) (suffix -1) Description The device is manufactured in PNP Planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation Figure 1. Internal schematic diagram voltage. Applications CCFL drivers Voltage regulators Relay drivers High efficiency low voltage switching applications Table 1. Devices summary Order codes Marking Package Packaging STD2805T4 D2805 DPAK Tape & reel STD2805-1 D2805 IPAK Tube June 2007 Rev 1 1/9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 9 change without notice.Electrical ratings STD2805 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I =0) -60 V CBO E V Collector-emitter voltage (I =0) -60 V CEO B V Emitter-base voltage (I =0) -6 V EBO C I Collector current -5 A C I Collector peak current (t < 5ms) -10 A CM P I Base current -2 A B P Total dissipation at T 25C 15 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 8.33 C/W thj-case 2/9