STD30N10F7 STMicroelectronics

STD30N10F7 N-channel 100 V, 0.02 typ., 32 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD30N10F7 100 V 0.024 32 A 50 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- G(1) state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) AM01475v1 noZen Table 1: Device summary Order code Marking Package Packing STD30N10F7 30N10F7 DPAK Tape and reel May 2017 DocID025607 Rev 4 1/15 www.st.com This is information on a product in full production. Contents STD30N10F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information..................................... 9 4.2 DPAK (TO-252) packing information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID025607 Rev 4