STD30NF06 N-CHANNEL 60V - 0.020 - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STD30NF06 60 V <0.028 28 A TYPICAL R (on) = 0.020 DS EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 THROUGH-HOLE IPAK (TO-251) POWER 2 1 PACKAGE IN TUBE (SUFFIX -1 ) 1 SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK POWER PACKAGE IN TAPE & REEL TO-251 TO-252 (SUFFIX T4 ) (Suffix -1) (Suffix T4) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip- based process. The resulting transistor shows extremely INTERNAL SCHEMATIC DIAGRAM high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL , AUDIO AMPLIFIERS SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 60 V DS GS V Drain-gate Voltage (R = 20 k) DGR GS 60 V V Gate- source Voltage 20 V GS I Drain Current (continuous) at T = 25C 28 A D C I Drain Current (continuous) at T = 100C 20 A D C I () Drain Current (pulsed) 112 A DM P Total Dissipation at T = 25C 70 W tot C Derating Factor 0.47 W/C (1) dv/dt Peak Diode Recovery voltage slope 10 V/ns (2) E Single Pulse Avalanche Energy 230 mJ AS T Storage Temperature stg -55 to 175 C T Max. Operating Junction Temperature j () Pulse width limited by safe operating area. (1) I 28A, di/dt 300A/s, V V , T T SD DD (BR)DSS j JMAX o (2) Starting T = 25 C, I = 15A, V = 30V j D DD March 2002 1/10 .STD30NF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.14 C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W T Maximum Lead Temperature For Soldering Purpose 275 C l ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source I = 250 A, V = 0 60 V V D GS (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating 1 A I DS DSS Drain Current (V = 0) GS V = Max Rating T = 100C 10 A DS C Gate-body Leakage V = 20 V 100 nA I GS GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V V = V I = 250 A Gate Threshold Voltage 24V GS(th) DS GS D Static Drain-source On V = 10 V I = 15 A 0.020 0.028 GS D R DS(on) Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g Forward Transconductance V = 15 V I = 15 A 40 S fs DS D C Input Capacitance V = 25V, f = 1 MHz, V = 0 1750 pF iss DS GS C Output Capacitance 220 pF oss Reverse Transfer 70 pF C rss Capacitance 2/10