Product Information

STD3LN80K5

STD3LN80K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.756 ea
Line Total: USD 1890

2425 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
2425 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

Stock Image

STD3LN80K5
STMicroelectronics

2500 : USD 0.6619

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

STD3LN80K5 N-channel 800 V, 2.75 typ., 2 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max I DS DS(on) D STD3LN80K5 800 V 3.25 2 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This very high voltage N-channel Power G(1) MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Table 1: Device summary Order code Marking Package Packing DPAK STD3LN80K5 3LN80K5 Tape and reel July 2016 DocID027714 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STD3LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information ............................................................... 9 4.2 DPAK packing information .............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID027714 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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