STD3LN80K5 STMicroelectronics

STD3LN80K5 N-channel 800 V, 2.75 typ., 2 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max I DS DS(on) D STD3LN80K5 800 V 3.25 2 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This very high voltage N-channel Power G(1) MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Table 1: Device summary Order code Marking Package Packing DPAK STD3LN80K5 3LN80K5 Tape and reel July 2016 DocID027714 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STD3LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information ............................................................... 9 4.2 DPAK packing information .............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID027714 Rev 2