Product Information

STD3N40K3

Name: STD3N40K3
Brand: STMicroelectronics
SKU: STD3N40K3_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STD3N40K3 electronic component of STMicroelectronics

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Datasheet

MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 0.718 ea
Line Total: USD 1795

0 - Global Stock

MOQ: 2500 Multiples: 2500
Pack Size: 2500

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 2500 Multiples : 2500 STD3N40K3 STMicroelectronics	2500 : USD 0.7823

0 - WHS 2 Ships to you between Thu. 30 May to Mon. 03 Jun MOQ : 1 Multiples : 1 STD3N40K3 STMicroelectronics	1 : USD 3.339 10 : USD 1.2577

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Additional Infomation About Product

STD3N40K3 N-channel 400 V, 2.7 typ., 2 A SuperMESH3 Zener-protected Power MOSFET in a DPAK package Datasheet production data Features Order code V R max I Pw DSS DS(on) D STD3N40K3 400 V < 3.4 2 A 30 W TAB 100% avalanche tested 3 Extremely high dv/dt capability 1 Gate charge minimized DPAK Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram Applications 7 % Switching applications Description This SuperMESH3 Power MOSFET is the * result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. 6 AM01476v1 Table 1. Device summary Order code Marking Package Packaging STD3N40K3 3N40K3 DPAK Tape and reel July 2012 Doc ID 023398 Rev 1 1/16 This is information on a product in full production. www.st.com 16Contents STD3N40K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 13 6 Revision history . 15 2/16 Doc ID 023398 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 1.8 A 1.8 A
Vds - Drain-Source Breakdown Voltage 400 V 400 V
Rds On - Drain-Source Resistance 3.4 Ohms 3.4 Ohms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 4.5 V 4.5 V
Pd - Power Dissipation 30 W 30 W
Mounting Style Smd/Smt Smd/Smt
Package / Case DPAK DPAK
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 11 nC 11 nC
Tradename Supermesh Supermesh
Configuration Single Single
Series Std3n40k3 Std3n40k3
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 1.8 A 1.8 A
Drain-Source Breakdown Voltage 400 V 400 V
Gate-Source Breakdown Voltage 30 V 30 V
Power Dissipation 30 W 30 W
Rds On 3.4 Ohms 3.4 Ohms
Fall Time 14 ns 14 ns
Gate Charge Qg 11 nC 11 nC
Rise Time 8 ns 8 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 18 ns 18 ns
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 7 ns 7 ns