STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V Tjmax, 0.9 , 8 A MDmesh Power MOSFET 2 TO-220, TO-220FP, D PAK, DPAK, IPAK Features Type V R I Pw DSS DS(on) D 3 1 STD5NM60 650 V < 1 5 A 96 W 3 2 DPAK STD5NM60-1 650 V < 1 5 A 96 W 1 TO-220FP STB8NM60 650 V < 1 5 A 100 W 3 1 STP8NM60 650 V < 1 8 A 100 W (1) DPAK STP8NM60FP 650 V < 1 8 A 30 W 3 2 100% avalanche tested 3 2 1 1 HIgh dv/dt and avalanche capabilities TO-220 IPAK Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications Description The MDmesh is a new revolutionary Power MOSFET technology that associates the multiple drain process with the companys PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. Table 1. Device summary Order codes Marking Package Packaging STD5NM60-1 D5NM60 IPAK Tube STD5NM60T4 D5NM60 DPAK Tape & reel STB8NM60T4 B8NM60 DPAK Tape & reel STP8NM60 P8NM60 TO-220 Tube STP8NM60FP P8NM60FP TO-220FP Tube October 2008 Rev 17 1/18 www.st.com 18Electrical ratings STP8NM60, STD5NM60, STB8NM60 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 IPAK TO-220FP DPAK DPAK V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 8 5A 8 D C (1) (1) I Drain current (continuous) at T =100 C 5 A 5 3.1 D C (2) (1) (1) I Drain current (pulsed) 32 A 32 20 DM P Total dissipation at T = 25 C 100 30 96 W TOT C Derating factor 0.8 0.24 0.0.4 W/C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V -- 2500 -- V ISO (t=1 s T =25 C) C T Operating junction temperature J -55 to 150 C Storage temperature T stg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I 5 A, di/dt 400 A/s, V = 80%V SD DD (BR)DSS Table 2. Thermal resistance Value Symbol Parameter Unit TO-220 IPAK TO-220FP DPAK DPAK R Thermal resistance junction-case max 1.25 1.3 4.16 C/W thj-case R Thermal resistance junction-ambient max 62.5 C/W thj-a Maximum lead temperature for soldering T 300 C l purpose Table 3. Avalanche data Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2.5 A AS (pulse width limited by Tj Max) Single pulse avalanche energy E 200 mJ AS (starting Tj=25 C, I =I , V =50 V) D AS DD 2/18