STD4NS25 N-CHANNEL 250V - 0.9 - 4A DPAK/IPAK MESH OVERLAY MOSFET TYPE V R I DSS DS(on) D STD4NS25 250 V < 1.1 4 A TYPICAL R (on) = 0.9 DS EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL DPAK IPAK DESCRIPTION TO-252 TO-251 Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Companys proprietary edge termina- tion structure, makes it suitable in coverters for INTERNAL SCHEMATIC DIAGRAM lighting applications. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 250 V DS GS V Drain-gate Voltage (R = 20 k) 250 V DGR GS V Gate- source Voltage 20 V GS I Drain Current (continuos) at T = 25C 4A D C I Drain Current (continuos) at T = 100C 2.5 A D C I ( ) Drain Current (pulsed) 16 A DM P Total Dissipation at T = 25C 50 W TOT C Derating Factor 0.4 W/C dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j (1) I 4A, di/dt300 A/s, V V , TjT ()Pulse width limited by safe operating area SD DD (BR)DSS jMAX February 2001 1/9 Obsolete Product(s) - Obsolete Product(s)STD4NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W Rthc-sink Thermal Resistance Case-sink Typ 1.5 C/W T Maximum Lead Temperature For Soldering Purpose 275 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 4A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 120 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 250 V (BR)DSS D GS Breakdown Voltage I V = Max Rating 1A DSS DS Zero Gate Voltage Drain Current (V = 0) GS V = Max Rating, T = 125 C 10 A DS C I Gate-body Leakage V = 20V 100 nA GSS GS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V , I = 250A 23 4 V GS(th) DS GS D R Static Drain-source On V = 10V, I = 2 A DS(on) GS D 0.9 1.1 Resistance I On State Drain Current V > I x R 4A D(on) DS D(on) DS(on)max, V =10V GS DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V > I x R 1 3.5 S fs DS D(on) DS(on)max, I =2A D C Input Capacitance V = 25V, f = 1 MHz, V = 0 355 pF iss DS GS C Output Capacitance 64 pF oss Reverse Transfer C 29.5 pF rss Capacitance 2/9 Obsolete Product(s) - Obsolete Product(s)