STD64N4F6AG STMicroelectronics

STD64N4F6AG Automotive-grade N-channel 40 V, 7 m typ., 54 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD64N4F6AG 40 V 8.2 m 54 A 60 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Figure 1: Internal schematic diagram Low gate drive power loss Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STD64N4F6AG 64N4F6 DPAK Tape and reel June 2015 DocID027883 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STD64N4F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information..................................... 9 4.2 DPAK (TO-252) packing information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID027883 Rev 1