STF11N65K3 STMicroelectronics

STF11N65K3 N-channel 650 V, 0.765 , 11 A, TO-220FP SuperMESH3 Power MOSFET Features R DS(on) Type V I P DSS D tot max STF11N65K3 650 V < 0.85 11 A 35 W 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Gate charge minimized TO-220FP Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Applications Figure 1. Internal schematic diagram Switching applications D(2) Description This device is an N-channel Zener-protected SuperMESH3 Power MOSFET developed G(1) using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF11N65K3 11N65K3 TO-220FP Tube October 2011 Doc ID 17931 Rev 2 1/13 www.st.com 13 Contents STF11N65K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 17931 Rev 2