Product Information

STF18N65M2

STF18N65M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5107 ea
Line Total: USD 1.51

42 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
816 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STF18N65M2
STMicroelectronics

1 : USD 1.0133

42 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STF18N65M2
STMicroelectronics

1 : USD 1.5107
10 : USD 1.2871
50 : USD 1.1663
100 : USD 1.0273
500 : USD 0.9649
1200 : USD 0.9366

816 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 8
Multiples : 1

Stock Image

STF18N65M2
STMicroelectronics

8 : USD 1.0133

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STF18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet production data Features R DS(on) Order code V I DS D max STF18N65M2 650 V 0.33 12 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile oss 1 100% avalanche tested TO-220FP Zener-protected Applications Figure 1. Internal schematic diagram Switching applications LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packaging STF18N65M2 18N65M2 TO-220FP Tube January 2015 DocID026877 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STF18N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID026877 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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