STF27N60M2-EP STMicroelectronics

STF27N60M2-EP N-channel 600 V, 0.150 typ., 20 A MDmesh M2 EP Power MOSFET in TO-220FP package Datasheet - production data Features Order code V R max I DS DS(on) D STF27N60M2-EP 600 V 0.163 20 A Extremely low gate charge Excellent output capacitance (C ) profile OSS Very low turn-off switching losses 100% avalanche tested Zener-protected TO-220FP Applications Switching applications Figure 1: Internal schematic diagram Tailored for very high frequency converters D(2) (f > 150 kHz) Description These devices are N-channel Power MOSFETs developed using MDmesh M2 EP enhanced performance technology. Thanks to their strip G(1) layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STF27N60M2-EP 27N60M2EP TO-220FP Tube January 2016 DocID028863 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STF27N60M2-EP Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 TO-220FP package information ...................................................... 10 5 Revision history .............................................................................. 12 2/13 DocID028863 Rev 1