STF33N60DM2 STMicroelectronics

STF33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in TO-220FP package Datasheet - production data Features Order code V T R max. I DS Jmax. DS(on) D STF33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness TO-220FP Zener-protected Figure 1: Internal schematic diagram Applications D(2) Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr G(1) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STF33N60DM2 33N60DM2 TO-220FP Tube July 2016 DocID026861 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STF33N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ...................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID026861 Rev 2