STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK Datasheet production data Features Order codes V R max. I Ptot DSS DS(on) D STF6N65K3 TAB 30 W STFI6N65K3 650 V < 1.3 5.4 A STU6N65K3 110 W 3 3 2 2 1 2 1 1 3 100% avalanche tested TO-220FP IPAKFP IPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram Zener-protected D(2,TAB) Applications Switching applications G(1) Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- S(3) resistance, superior dynamic performance and AM01476v1 high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STF6N65K3 TO-220FP STFI6N65K3 6N65K3 IPAKFP Tube STU6N65K3 IPAK November 2012 Doc ID 18424 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STF6N65K3, STFI6N65K3, STU6N65K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 18424 Rev 2