STF6N90K5 STMicroelectronics

STF6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID STF6N90K5 900 V 1.10 6 A Industrys lowest RDS(on) x area Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FP Applications Switching applications Figure 1: Internal schematic diagram D(2) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate G(1) charge for applications requiring superior power density and high efficiency. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STF6N90K5 6N90K5 TO-220FP Tube November 2016 DocID029948 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STF6N90K5 Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 TO-220FP package information ...................................................... 10 5 Revision history .............................................................................. 12 2/13 DocID029948 Rev 1