STD7N52DK3, STF7N52DK3 Datasheet N-channel 525 V, 0.95 typ., 6 A, SuperFREDmesh3 Power MOSFETs in DPAK and TO-220FP packages Features V R max. I P Order codes DS DS(on) D TOT TAB STD7N52DK3 90 W 3 525 V 1.15 6 A 2 STF7N52DK3 25 W 1 3 2 1 100% avalanche tested TO-220FP DPAK Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance D(2, TAB) Improved diode reverse recovery characteristics Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These devices are developed using the revolutionary N-channel SuperFREDmesh3 technology. They associate all advantages of reduced on- resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the FDmesh advanced technology. Product status links STD7N52DK3 STF7N52DK3 Product summary STD7N52DK3 Order code STD7N52DK3 Marking 7N52DK3 Package DPAK Packing Tape and reel STF7N52DK3 Order code STF7N52DK3 Marking 7N52DK3 Package TO-220FP Packing Tube DS6515 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7N52DK3, STF7N52DK3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP V Drain-source voltage 525 V DS V Gate-source voltage 30 V GS (1) Drain current (continuous) at T = 25 C 6 6 A C I D (1) Drain current (continuous) at T = 100 C 4 4 A C (2) (1) I Drain current (pulsed) 24 24 A DM P Total dissipation at T = 25 C 90 25 W TOT C (3) I Avalanche current, repetitive or non-repetitive 3 A AR (4) E Single pulse avalanche energy 110 mJ AS (5) dv/dt Peak diode recovery voltage slope 20 V/ns (5) Diode reverse recovery current slope 400 A/ns di/dt Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. This value is limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. Pulse width is limited by T . Jmax 4. Starting T = 25 C, I = I , V = 50 V J D AR DD 5. I 6 A, V V , V = 80% V SD DS(peak) (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP R Thermal resistance junction-case 1.39 5 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 C/W thj-amb 1. When mounted on an 1-inch FR-4, 2oz Cu board. DS6515 - Rev 3 page 2/19